http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107068687-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11582 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11556 |
| filingDate | 2017-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107068687-B |
| titleOfInvention | A kind of 3D NAND memory device and manufacturing method thereof |
| abstract | The present invention provides a 3D NAND storage device and its manufacturing method, comprising: a substrate; a first storage area, a through-hole formation area and a second storage area sequentially arranged on the base along the bit line direction, the first storage area and the second storage area The second storage area includes a storage stack layer and a channel hole in the storage stack layer; a via hole formation area is provided between the first storage area and the second storage area, and the via hole formation area includes a via through the oxide layer and the nitride layer. The hole stack layer, the through contact hole penetrating the through hole stack layer and the insulating layer on the side wall of the through hole stack layer; the gate line gap of the first storage area and the second storage area. The through contact hole of this structure is convenient to realize the connection between the storage device and the CMOS chip, and is easy to integrate with the existing process, especially when the thickness of the stack layer continues to increase, there is no need to etch the metal stack to form the through contact hole, which is beneficial to the process. Realization and continuous improvement of integration. |
| priorityDate | 2017-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 13.