| abstract |
Methods and structures are described for improving the performance of integrated semiconductor transistors operating at high frequencies and/or high powers. Two capacitors can be connected to the input of the semiconductor transistor and tuned to suppress second harmonic generation and to convert and match the input impedance of the device. A two-stage tuning process is described. The transistors may contain gallium nitride and may be configured as power transistors capable of handling up to 1000W of power. The tuned transistors are able to operate with peak drain efficiencies higher than 60% at frequencies up to 6GHz. |