http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107068559-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32422 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 |
| filingDate | 2014-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fc976373bab7d13fd7e7342d001b560 |
| publicationDate | 2017-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107068559-A |
| titleOfInvention | Dual Chamber Plasma Etcher with Ion Accelerator |
| abstract | Embodiments herein are generally directed to semiconductor processing methods and apparatus. More specifically, these embodiments relate to dual chamber plasma etchers with ion accelerators. A semi-finished semiconductor substrate is provided in the reaction chamber. The reaction chamber is divided into an upper subchamber and a lower subchamber by a grid assembly. Plasma is generated in the upper subchamber and the substrate is placed in the lower subchamber. The grid assembly includes at least two grids, each grid is negatively biased, and each grid includes perforations that allow certain substances to pass through. The uppermost grid is negatively biased to repel electrons. The lowermost grid (compared to the uppermost grid) is further negatively biased to accelerate positive ions from the upper subchamber to the lower subchamber. Etching gas is supplied directly to the lower sub-chamber. The etching gas and ions react with the surface of the substrate as necessary to etch the substrate. |
| priorityDate | 2013-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.