http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107039431-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11 |
| filingDate | 2016-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107039431-B |
| titleOfInvention | Semiconductor devices and integrated circuits |
| abstract | The present disclosure provides semiconductor devices and integrated circuits. A semiconductor device includes: a first transistor, a second transistor, and a third transistor provided on a substrate, each of the first to third transistors including source and drain regions spaced apart from each other, on the substrate in a first direction A gate structure extending and interposed between the source and drain regions, and a channel region connecting the source and drain regions to each other. Each of the channel region of the second transistor and the channel region of the third transistor includes a plurality of channel portions spaced apart from each other in a second direction perpendicular to the upper surface of the substrate and connected respectively to the source-drain region. The width of the channel portion of the third transistor in the first direction is greater than the width of the channel portion of the second transistor in the first direction. |
| priorityDate | 2015-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID160069742 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID451558209 |
Total number of triples: 28.