| abstract |
A method for manufacturing an element chip, an electronic component mounting structure, and a method for manufacturing the same, capable of suppressing the creep of a conductive material during mounting. In a plasma treatment process used in a method of manufacturing an element chip that divides a substrate having a plurality of element regions and whose element surfaces are covered with an insulating film to manufacture a plurality of element chips, the substrate is exposed to the first plasma, thereby exposing the substrate to the first plasma. The substrate is divided into element chips, and the element chips having the first surface, the second surface, and the side surfaces are held on the carrier with a space therebetween, and the side surfaces and the insulating film are exposed. Then, the element chip is exposed to the second plasma to partially remove the region in contact with the insulating film among the exposed side surfaces to form a recessed portion, and the third plasma is used to cover the recessed portion with a protective film to suppress mounting. The conductive material climbs sideways during the process. |