http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107039299-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-34 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-544 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate | 2016-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107039299-B |
| titleOfInvention | Metal-oxide-semiconductor parameter degradation circuit and metal-oxide-semiconductor parameter degradation early warning circuit |
| abstract | The present invention relates to a kind of metal-oxide-semiconductor parameter degradation circuits, including CMOS inverter, stress to apply circuit and parameter measurement circuit；CMOS inverter includes the first PMOS tube and the first NMOS tube；Stress applies circuit and is connected under the control of first mode selection signal, and stress applies after circuit receives control signal and applies minus gate voltage bias stress or positive grid voltage bias stress to the first PMOS tube of CMOS inverter；Parameter measurement circuit is connected under the control of second mode selection signal；Parameter measurement circuit receives input signal, and input signal is exported to the input terminal of CMOS inverter；First mode selection signal and second mode selection signal are complementary signal；The accuracy of metal-oxide-semiconductor parameter degradation test result can be improved in the present invention.Moreover, it relates to which a kind of metal-oxide-semiconductor parameter degradation early warning circuit, can accurately analyze influence of the NBTI effect to PMOS tube device parameters. |
| priorityDate | 2016-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID409904393 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID65407 |
Total number of triples: 16.