http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107037094-A

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-414
filingDate 2016-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1da12bcdd1cb7dfc5288b54148461c00
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publicationDate 2017-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-107037094-A
titleOfInvention Semiconductor devices and its manufacture method
abstract There is provided semiconductor structure and forming method thereof.The semiconductor structure includes:Substrate;Grid structure, above the first surface of substrate;And source region and drain region, it is adjacent with grid structure in the substrate.The semiconductor structure also includes:Channel region, is interposed between source region and drain region and below grid structure.The semiconductor structure also includes:First layer, above the second surface relative with first surface of substrate;And the second layer, above first layer.The semiconductor structure also includes:Sense film, above channel region and above at least a portion of first layer and the second layer;And trap, above the sense film and cut off first layer and the second layer.
priorityDate 2015-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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