http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107017286-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7856 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2016-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107017286-B |
| titleOfInvention | Semiconductor element and method of manufacturing the same |
| abstract | The invention discloses a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, at least one active region, at least one gate structure, and an insulating structure. The active region is located within at least a portion of the substrate. The gate structure is on the active region. The gate structure has at least one end sidewall and a top surface, and the end sidewall and the top surface meet to form a top inner corner. The top interior corners are acute. The insulating structure is located on the substrate and is adjacent to the end sidewall of the gate structure. |
| priorityDate | 2016-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.