| abstract |
The present invention provides a memory device, a manufacturing method thereof, and a semiconductor device including: a first memory unit, a bit line, and a second memory unit. The first memory cell has a first stack structure including a first memory layer between the first heater electrode and the first bidirectional threshold switching device. A bit line is located on the first memory cell. A second memory cell is located on the bit line and has a second stack structure including a second memory layer between the second bidirectional threshold switching device and the second heater electrode. The first stack structure and the second stack structure are symmetrical with respect to the bit lines. |