Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4175 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1066 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-432 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4916 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8252 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7782 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0629 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-085 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-402 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
filingDate |
2016-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2020-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2020-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
CN-107017255-B |
titleOfInvention |
Nitride semiconductor device and method of manufacturing the same |
abstract |
The present invention relates to a nitride semiconductor device including a conductive substrate and a nitride semiconductor layer. The nitride semiconductor layer exists on the conductive substrate. The nitride semiconductor layer includes a lateral-type first transistor structure and a lateral-type second transistor structure. The conductive substrate includes a first potential control region and a second potential control region, and the second potential control region can independently perform potential control with respect to the first potential control region. In a plan view of the nitride semiconductor layer, the first transistor structure overlaps the first potential control region, and the second transistor structure overlaps the second potential control region. |
priorityDate |
2015-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |