http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107017199-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2016-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107017199-B |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | The present disclosure provides a method of manufacturing a semiconductor device. A method of manufacturing a semiconductor device includes: forming grooves in a first dielectric layer on a substrate, the first dielectric layer including first portions between the grooves; forming a first barrier layer and an interconnection layer in each groove; recessing the interconnect layer and the first barrier layer; forming a blanket pattern on the recessed interconnect layer; etching at least a portion of the first portion by a first etching process; continuing to etch the overlay pattern and at least a portion of the first portion by a second etch process to form a trench; conformally forming a second barrier layer in the trench and on the recessed interconnect layer; and forming a second dielectric layer on the second barrier layer without filling the trench such that an air gap is formed in the trench. |
| priorityDate | 2015-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14917 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457280313 |
Total number of triples: 13.