| abstract |
Si-containing film-forming compositions comprising carbosilane-substituted amine precursors are disclosed. The carbosilane-substituted amine precursor has the formula (R 1 ) a N(-SiHR 2 -CH 2 -SiH 2 R 3 ) 3-a , where a = 0 or 1; R 1 is H, C1 to C6 alkyl , or halogen; R 2 and R 3 are each independently H; halogen; an alkoxy group of formula OR', wherein R' is an alkyl (C1 to C6); Each R" is independently H, C1-C6 alkyl, C1-C6 alkenyl, or C3-C10 aryl or heterocyclyl. Also disclosed are methods of synthesizing the carbosilane-substituted amine precursors and their use in deposition processes. |