http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107001934-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02107 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R33-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate | 2015-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107001934-B |
| titleOfInvention | Improved technology of NiFe fluxgate device |
| abstract | In the example, the etchants used to simultaneously etch NiFe and AIN at approximately equal etch rates include phosphoric acid, acetic acid, nitric acid, and deionized water. Alternating layers of NiFe and AIN may be used to form the magnetic core (120) of a fluxgate magnetometer in an integrated circuit (100). Wet etching provides good etch rates of alternating layers with good dimensional control and with good resulting magnetic core profiles. Alternating layers of NiFe and AIN can be encapsulated with stress relief layers (118, 122). A resist pattern can be used to define the core geometry. The over-etching time of the wet etching can be controlled such that the magnetic core pattern extends beyond the base of the magnetic core by at least 1.5 μm after etching. The photomask used to form the resist pattern can also be used to form the stress relief etch pattern. |
| priorityDate | 2014-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.