http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106992776-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-017509 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K19-0175 |
| filingDate | 2017-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106992776-B |
| titleOfInvention | GaN-based Enhanced Depletion Mode Level Shifter |
| abstract | A gallium nitride-based enhanced depletion mode level conversion circuit includes a first inverter circuit, a first output circuit, a second inverter circuit, a second output circuit, a third inverter circuit and a third output circuit. The first inverter circuit realizes level inversion, the first output circuit pulls down the output voltage of the first inverter circuit, the second inverter circuit realizes the inversion of the output voltage of the first output circuit, and the second output circuit pulls down the output voltage of the second inverter circuit. The output voltage of the inverter circuit is pulled down, the third inverter circuit inverts the output voltage of the second output circuit, and the third output circuit pulls down the output voltage of the third inverter circuit. The invention improves the shortcomings of the existing gallium nitride-based enhanced depletion-mode level conversion circuit that cannot be strictly turned off and has poor stability, thereby achieving a simple implementation process, high integration with other gallium nitride-based circuits, and reduced interference. advantage. |
| priorityDate | 2017-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 14.