| abstract |
The invention discloses a rapid preparation method and application of a perovskite film, which uses a hot gas drying method to realize rapid crystal growth, and obtains a flat and dense high-quality perovskite film; including: preparing lead-containing materials (lead acetate, lead oxide, At least one of lead hydroxide, lead sulfate, lead carbonate, lead nitrate, lead (hypo)phosphate, lead chloride, lead iodide, lead bromide) and organic halogen salts (methylamine iodine, formamidine iodine, methylamine bromine, formamidine bromide, methylamine chloride, formamidine chloride) as a perovskite precursor; deposited on the substrate; using dry hot gas to quickly dry the perovskite deposited on the substrate Precursor solution to form a flat and dense perovskite film. The invention has high efficiency and low cost, is suitable for large-scale industrial production, and the obtained perovskite thin film can be applied in the fields of many photoelectric functional devices such as solar cells, light-emitting diodes, photosensitive diodes, lasers, thin-film transistors, photodetectors, and micro-sensor devices. |