| abstract |
The invention discloses a top-gate thin film transistor and its manufacturing method, an array substrate, and a display panel, including a light-shielding layer formed between a base substrate and an active layer, and the light-shielding layer is made of non-metallic materials. The top-gate thin film transistor provided by the present invention uses non-metallic materials as the light-shielding layer, which not only avoids the parasitic capacitance generated by the metal layer as the light-shielding layer, but also can effectively reduce the influence of light leakage on the active region, thereby effectively improving product quality. rate and device performance. The structure of the thin film transistor can also be simplified, so that the process complexity can be effectively reduced, and the manufacturing process of the thin film transistor can be shortened. |