http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106970113-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_53abfd7875525bf3adee45f6b266f298 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-00 |
| filingDate | 2017-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5568d5074c3a0935144f3b8c3aac51bb |
| publicationDate | 2017-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106970113-A |
| titleOfInvention | The gas sensor of multiple-layer stacked |
| abstract | This application provides a kind of new gas sensor configuration, including metal level, including transparent conducting oxide layer, the thin grid line of the first metal, also include three layers of porous gas sensing layer, it is porous oxidation tin layers, porous oxidation cobalt layers and porous oxidation nickel dam respectively, and this three layers are soaked by carbon quantum dot solution, gas sensing layer is modified, the semiconductor property of gas sensing layer obtains very big change under the new structure, sensitivity for gas sensing has obtained higher lifting, and by the detecting structure of setting, improve sensor efficiency. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109030575-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107748192-A |
| priorityDate | 2017-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.