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publicationDate 2017-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-106960866-A
titleOfInvention Oxide materials and semiconductor devices
abstract An object is to provide a material suitable for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which an electronic state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Still another object is to manufacture a highly reliable semiconductor device by providing stable electrical characteristics to a transistor using an oxide semiconductor film for a channel. Semiconductor devices are formed using oxide materials that include c-axis oriented crystals that have a triangular or hexagonal arrangement of atoms when viewed from a surface or interface direction and rotate about the c-axis.
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