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filingDate 2017-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dbfa2f22d35dbb1b3f7c64d4fcfa5af
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publicationDate 2017-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-106952728-A
titleOfInvention The method that capacitor energy storage density is improved using atmos low-temperature plasma
abstract The present invention relates to a kind of method that utilization atmos low-temperature plasma improves capacitor energy storage density, including:By pending capacitor film cleaning, dry;Selected atmos low-temperature plasma produces equipment, and the capacitor film is positioned over into the plasma generating area that atmos low-temperature plasma produces equipment;The species of selected high voltage power supply, predecessor and working gas, and adjust discharge parameter and working gas flow velocity;Carry out plasma-deposited processing.The present invention using atmos low-temperature plasma handle capacitor film, capacitor film surface breakdown field intensity can improve 17% and more than, energy storage density improve 23% and more than.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108611623-B
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priorityDate 2017-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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