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filingDate 2017-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2019-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-106944037-B
titleOfInvention A kind of visible light-responded characteristic zinc oxide/pucherite hetero-junction thin-film and its preparation method and application
abstract The present invention provides a kind of visible light-responded characteristic zinc oxide/pucherite hetero-junction thin-film and its preparation method and application, first configures BiVO 4 Then substrate is put into BiVO using the reversed layer-by-layer of hydroxyl layer electrostatic adsorption by precursor liquid and ZnO precursor liquid 4 Certain thickness amorphous BiVO is prepared in precursor liquid 4 Film, by amorphous BiVO 4 Film irradiates under ultraviolet light forms hydroxyl layer, then puts it into the secondary reversed LBL self-assembly of progress in ZnO precursor liquid, forms BiVO 4 - ZnO noncrystal membrane finally obtains visible light-responded characteristic zinc oxide/pucherite hetero-junction thin-film in 500 DEG C of heat preservation crystallization.Present invention process process is simple and easy to control, and experiment condition requires lower, the ZnO/BiVO of preparation 4 Hetero-junction thin-film has broad application prospects in photocatalysis field.
priorityDate 2017-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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