http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106935691-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 |
| filingDate | 2017-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106935691-B |
| titleOfInvention | A kind of epitaxial preparation method of InGaN |
| abstract | The present invention relates to the technical fields of semiconductor epitaxial process, more specifically, it is desirable that disclose that a kind of utilization two-dimensional growth enhancement mode deposits GaN insert layer, to improve the epitaxy method of InGaN crystalline quality.Include the following steps: substrate needed for providing first, over the substrate successively epitaxial growth GaN buffer layer, GaN template layer and the InGaN epitaxial layer with periodical GaN insert layer, wherein GaN insert layer is using two-dimensional growth enhancement mode deposition.The present invention can be effectively improved the mutually separation in InGaN epitaxial layer, defect, raising crystalline quality in inhibition layer.When for photoelectric device, leakage current can be reduced, improves band edge and shines or absorb. |
| priorityDate | 2017-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.