http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106935690-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6fbb91e3f8cdf858527814216aa11142 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate | 2017-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f57f557e43871c98357abb31fe804e0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff1bf2a17668258e7964a13e322a0bf3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c526bffb6cf554a9c1f5d4f045a4ef6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6af63c279e5cee920565d36de0782e82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3407a8e6d8ad436298e00dcea2a03794 |
| publicationDate | 2017-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106935690-A |
| titleOfInvention | An Epitaxial Structure for Improving the Light Output Power of Ultraviolet LEDs |
| abstract | The invention discloses an epitaxial structure for improving the light output power of an ultraviolet LED. The epitaxial structure includes a substrate arranged in sequence from bottom to top, a GaN buffer layer, an undoped GaN layer, a doped N-type GaN layer, and an AlGaN layer. /GaN multi-quantum well structure, insertion layer, electron blocking layer EBL, P-type GaN layer, the substrate is a sapphire substrate, the thickness of the GaN buffer layer is 20-25nm, the growth temperature is 530-550°C, and Recrystallize the GaN buffer layer at a constant temperature of 1050°C for 6 minutes, the thickness of the undoped GaN layer is 2.0-2.5 μm, the growth temperature is 1050°C, and the thickness of the doped N-type GaN layer is 2.5-3.0 μm, wherein The Si doping concentration is 5× 10 18 cm ‑3 , and the growth temperature is 1050°C. The multi-quantum well AlGaN/GaN structure is formed by alternately growing multi-quantum well AlGaN layers and multi-quantum well GaN layers in 6 periods. The invention improves the crystal quality of the ultraviolet LED chip, optimizes the electron blocking effect of the electron blocking layer, reduces electron leakage, thereby improving the efficiency decline of the ultraviolet LED device and increasing the light output power. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113206175-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113206175-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108630790-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109585622-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109860351-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107507891-A |
| priorityDate | 2017-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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