| abstract |
The present disclosure provides a semiconductor device and a method of manufacturing the same. In a method of manufacturing a semiconductor device, a dummy gate structure is formed on a substrate, a first insulating layer is formed on the dummy gate structure, the dummy gate structure is removed to form a gate space in the first insulating layer, a first conductive layer is formed in the gate space to form a reduced gate space, a second conductive layer made of a different material from the first conductive layer is filled in the reduced gate space, the filled first conductive layer and second conductive layer are recessed to form a first gate recess, a third conductive layer is formed on the first conductive layer and second conductive layer in the first gate recess, and the second conductive layer protrudes from the first conductive layer after the filled first conductive layer and second conductive layer are recessed. |