Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b574329dca6040402d091ad9db766a5c |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-425 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 |
filingDate |
2015-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae25fae69843c6a7bf288c979dd06c32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb099145f6a35ccc160a230595e88c9c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3600f6c9d170ef64a38e288a916efda0 |
publicationDate |
2017-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
CN-106919013-A |
titleOfInvention |
A low-etch cleaning solution for removing photoresist residues |
abstract |
The invention discloses a cleaning solution for removing photoresist residues and its composition. The cleaning solution for removing photoresist residues contains (a) quaternary amine hydroxide (b) alcohol amine (c) organic solvent (d) C 2 -C 6 polyhydric alcohol (e) imidazole and its derivatives. The cleaning solution can more effectively remove photoresist residues on the wafer, and basically does not corrode metal copper, aluminum, etc.; it has good application prospects in the fields of semiconductor wafer cleaning and the like. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113176718-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112592775-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113736584-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112764330-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109976111-A |
priorityDate |
2015-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |