http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106919012-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_69c511954e9d43925a40036ee50d1fa7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-422 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 |
| filingDate | 2015-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1020872e6f3615206bb8ea433809273 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8be0e789cbde3592d5b65437a80d22cf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fcd93ca5ae900f1f80d5361153e779d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b778749e0bf49feff52fa50329c0177 |
| publicationDate | 2017-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106919012-A |
| titleOfInvention | A kind of photoresistance cleaning liquid composition of low etching |
| abstract | The invention discloses a kind of photoresistance cleaning liquid composition of low etching, it contains (a) hydramine (b) solvent (c) water (d) corrosion inhibitor (e) aldehyde compound.The cleaning fluid not fluoride and azanol, and can rapidly remove the photoresist for causing complicated chemical change post-crosslinking to be hardened by hard baking, dry etching, ashing and Plasma inpouring, can be while the photoresistance residue on realizing removal metal wire (metal), through hole (via) and metal gasket (Pad) wafer, to base material (such as metallic aluminium, tungsten, nonmetallic silica etc.) do not attack substantially.Cleaning fluid of the invention has a good application prospect in fields such as cleaning semiconductor chips. |
| priorityDate | 2015-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 141.