http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106887455-B

Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
filingDate 2016-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2020-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-106887455-B
titleOfInvention Semiconductor device structure and forming method thereof
abstract Embodiments of the present invention provide a semiconductor device structure. The semiconductor device structure includes a substrate having a first source region, a second source region, a first drain region, and a second drain region. The semiconductor device structure includes a first gate structure located over the substrate and between the first source region and the first drain region. The semiconductor device structure includes a second gate structure over the substrate and between the second source region and the second drain region. The first thickness of the first gate structure is greater than the second thickness of the second gate structure. The first gate width of the first gate structure is less than the second gate width of the second gate structure. The embodiment of the invention also provides a forming method of the semiconductor device structure.
priorityDate 2015-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 41.