http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106876335-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate | 2015-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106876335-B |
| titleOfInvention | Method for manufacturing semiconductor structure |
| abstract | A method of fabricating a semiconductor structure, comprising: forming a substrate comprising a first region and a second region, a first fin portion protruding out of the substrate in the first region and a second fin portion protruding out of the substrate in the second region; forming a first pseudo gate structure comprising a gate oxide layer and a first pseudo gate electrode layer on the first fin portion, and forming a second pseudo gate structure comprising a pseudo gate oxide layer and a second pseudo gate electrode layer on the second fin portion; removing the first pseudo gate electrode layer and the second pseudo gate electrode layer, and then carrying out a first annealing process on the gate oxide layer and the pseudo gate oxide layer; carrying out a nitrogen doping process and a second annealing process on the gate oxide layer and the pseudo gate oxide layer; and forming a first grid structure and a second grid structure on the surfaces of the first fin part and the second fin part respectively. According to the invention, the gate oxide layer is subjected to the first annealing process and then subjected to the nitrogen doping process, so that the nitrided part of the gate oxide layer is prevented from being oxidized again due to the first annealing process, and the electrical property of the semiconductor device is further improved. |
| priorityDate | 2015-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.