http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106856197-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11582 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-1157 |
| filingDate | 2016-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106856197-B |
| titleOfInvention | Semiconductor device and method of manufacturing the same |
| abstract | A semiconductor device and a method of manufacturing the same. The semiconductor device includes: a first source seed layer; a second source seed layer, the second source seed layer being disposed above the first source seed layer, and simultaneously with the first source seed layer spaced apart; a stack structure formed on the second source seed layer; a channel layer extending through the stack structure to the first source seed and an interlayer source layer extending into the space between the first source seed layer and the second source seed layer while contacting the channel layer, the first source each of a source seed layer and the second source seed layer. |
| priorityDate | 2015-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.