http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106856172-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02323 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate | 2015-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106856172-B |
| titleOfInvention | Method for forming fin field effect transistor |
| abstract | A method for forming a fin field effect transistor includes: providing a semiconductor substrate, wherein a fin part is formed on the semiconductor substrate, and the material of the fin part is Ge, SiGe or III-V element; forming a dummy gate crossing the side wall and the top surface of a part of the fin part; forming a dielectric layer covering the semiconductor substrate, the fin part and the dummy gate, wherein the surface of the dielectric layer is flush with the top surface of the dummy gate; removing the pseudo gate to form a groove; forming a high-K dielectric layer containing oxygen ions on the side wall and the bottom surface of the groove; annealing the high-K dielectric layer containing the oxygen ions to enable the oxygen ions in the high-K dielectric layer containing the oxygen ions to be diffused into the fin portion at the bottom of the groove, and enabling the oxygen ions to react with the fin portion material to form an interface layer; and after annealing, forming a metal grid for filling the groove on the high-K dielectric layer. The method improves the interface characteristic between the high-K dielectric layer and the fin part of the fin field effect transistor. |
| priorityDate | 2015-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.