http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106854468-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-08 |
| filingDate | 2016-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106854468-B |
| titleOfInvention | A kind of silicon systems plural layers etching solution |
| abstract | The invention discloses a kind of silicon systems plural layers etching solution, including hydrofluoric acid solution, ammonium fluoride solution, the compound that surfactant and the following general formula indicate, In formula, R 1 Indicate one of amino, hydrogen, oxygen and hydroxyl；R 2 Indicate fluorine, chlorine, hydrogen, hydroxyl and C 1 ‑C 4 One of alkyl.Silicon systems plural layers etching solution of the present invention, which has, keeps silicon nitride layer and silicon oxide layer etching speed almost the same, the good advantage of etch effect. |
| priorityDate | 2016-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 127.