http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106830060-B

Outgoing Links

Predicate Object
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-133614
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-64
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01G21-006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01G21-003
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-13357
filingDate 2016-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2019-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-106830060-B
titleOfInvention A kind of CsPbX3Quantum dot, CsPbX3/SiO2Composite quantum dot and preparation method and backlight module
abstract The present invention provides a kind of CsPbX 3 Quantum dot, CsPbX 3 /SiO 2 Composite quantum dot and preparation method and backlight module, CsPbX 3 For the preparation method of quantum dot using cesium carbonate and halogenation lead salt as predecessor, oleic acid assists reprecipitation technology to prepare CsPbX as ligand, by ligand 3 Quantum dot.Inorganic material advantageously reduces the surface defect of quantum dot as predecessor, improves the stability under quantum dot light emitting efficiency and hot conditionsï¼›In addition, this reaction temperature is lower, CsPbX is conducive to extend while reducing preparation cost 3 The nucleation rate of quantum dot, to further decrease the surface defect of quantum dot.CsPbX provided by the invention 3 /SiO 2 Composite quantum dot is using 3-APTES as CsPbX 3 The coverture of quantum dot carries out insulation package to different quantum dots and further increases the stability under its quantum efficiency and high temperature to prevent the anion exchange between different halide quantum dots.
priorityDate 2016-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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