abstract |
According to the present invention, it is possible to provide a cleaning solution for removing photoresist on the surface of a semiconductor element having a low dielectric constant film (Low-k film) and a material containing 10 atomic % or more of tungsten, The cleaning solution contains 0.001 to 5 mass % of an alkaline earth metal compound, 0.1 to 30 mass % of an inorganic base and/or an organic base, and water. |