http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106796401-A

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filingDate 2015-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24fc1b958be16a1abc66d8bdf424bf85
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57d69c998ba644a25a483999a8d015ba
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publicationDate 2017-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-106796401-A
titleOfInvention Method for forming pattern, composition for forming upper layer film, resist pattern, and method for manufacturing electronic device
abstract The present invention provides a pattern forming method with excellent performance of DOF, EL and water spot defects, a resist pattern formed by the pattern forming method, an upper layer film forming composition used in the pattern forming method, and a method comprising: A method of manufacturing an electronic component according to the pattern forming method. The pattern forming method includes: step a, coating an actinic radiation-sensitive or radiation-sensitive resin composition on a substrate to form a resist film; step b, coating an upper layer film on the resist film forming a composition for forming an upper layer film on the resist film; step c, exposing the resist film on which the upper layer film is formed; and step d, using a developer solution containing an organic solvent, The exposed resist film is developed to form a pattern; and the receding contact angle of water on the surface of the upper layer film is 80° or more.
priorityDate 2014-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 44.