http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106783742-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823871 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate | 2015-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106783742-B |
| titleOfInvention | The forming method of fin formula field effect transistor |
| abstract | A kind of forming method of fin formula field effect transistor, comprising: formed expose the first etched hole of the first source region and the first drain region surface in the dielectric layer, and after exposing second etched hole on the second source region and the second drain region surface；The second oxide layer containing aluminium is formed in the side wall and bottom surface of the second etched hole；The first oxide layer of sulfur-bearing or selenium is formed in the side wall and bottom surface of the first etched hole；It anneals, so that the sulphion or plasma selenium in the first oxide layer of sulfur-bearing or selenium are diffused into the first source region and the first drain region of the first etched hole bottom, the aluminium ion in the second oxide layer containing aluminium is diffused into the second source region and the second drain region of the second etched hole bottom；The first oxide layer and the second oxide layer are removed, forms the first metal silicide layer in the first source region and the first drain region surface, forms the second metal silicide layer in the second source region and the second drain region surface.Method of the invention reduces the schottky barrier height of fin formula field effect transistor source-drain area. |
| priorityDate | 2015-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 49.