http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106783730-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2016-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106783730-B |
| titleOfInvention | Method for forming air gap/copper interconnection |
| abstract | A method for forming air gap/copper interconnection includes providing a semiconductor substrate, completing CMOS device front process on the semiconductor substrate, then forming a conventional first dielectric/copper interconnection structure on the semiconductor substrate; carrying out surface treatment on the conventional first dielectric/copper interconnection structure in an oxygen-containing atmosphere to form a layer of copper oxide on the surface of the copper interconnection line; etching a first medium in the middle of the copper interconnection line by using etching equipment; etching by adopting fluorine-based gas and oxygen-based gas in the process of etching the first medium, wherein the copper interconnection line is protected from being exposed in the etching gas atmosphere by copper oxide; reducing copper oxide on the surface of the copper interconnection line, namely converting the copper oxide on the surface of the copper interconnection line into metal copper again; removing residual photoresist by adopting wet-process liquid medicine and cleaning; a second dielectric is deposited to form an air gap/copper interconnect structure. |
| priorityDate | 2016-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.