http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106711325-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b741ec085646f4ce9c814a01617717e8
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-021
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00
filingDate 2015-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e63f69be1a08c51d8382f0a682d5161b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e7b90c475c0336cde488d5d21cb44c7
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publicationDate 2017-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-106711325-A
titleOfInvention Phase change thin film material, phase change memory unit and preparation method thereof
abstract The invention provides a phase-change thin film material, a phase-change memory unit and a preparation method thereof. The general formula of the phase-change thin film material is Ni x Ti y Sb z Te 100-xyz , wherein 0<x≤40, 15≤y ≤85, 15≤z≤85, 30≤x+y+z<100. The phase change thin film material provided by the present invention can achieve reversible phase change through external electric pulses. There are obvious high and low resistance states before and after the phase change, and the difference is large, which is convenient for external circuits to easily read "0" or "1"" state, is a relatively ideal phase-change memory material; phase-change thin film material of the present invention, compared with the commonly used Ge 2 Sb 2 Te 5 , has a higher crystallization temperature, faster crystallization speed, lower operating voltage and a more stable chemical preparation process.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11114616-B2
priorityDate 2015-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008020564-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013139162-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014162401-A1
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Total number of triples: 24.