| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14669 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14689
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14669
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14616
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14634
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14694 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
| filingDate |
2016-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2019-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-106711161-B |
| titleOfInvention |
Infrared image sensor assembly and manufacturing method thereof |
| abstract |
The invention discloses an infrared image sensor assembly and a manufacturing method thereof. The infrared image sensor device includes at least one III-V group compound layer on the semiconductor substrate, wherein the portion of the III-V group compound layer exposed from the pattern functions as an active pixel region to detect incident infrared rays. The infrared image sensor device includes at least one transistor coupled to the active pixel region, and charges generated by the active pixel region are transferred to the transistor. |
| priorityDate |
2015-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |