http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106684090-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11582 |
| filingDate | 2017-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106684090-B |
| titleOfInvention | Three-dimensional non-volatile memory structure and fabrication method thereof |
| abstract | The invention provides a three-dimensional non-volatile memory structure and a manufacturing method thereof, wherein the three-dimensional non-volatile memory structure includes a substrate, a stack structure, a charge storage column, a channel column and a ferroelectric material column. The stack structure is disposed on the base and includes a plurality of conductor layers and a plurality of first dielectric layers stacked alternately. The charge storage pillars are arranged in the stack structure. The channel column is disposed inside the charge storage column. The ferroelectric material column is arranged inside the channel column. The three-dimensional nonvolatile memory structure can have better electrical performance. |
| priorityDate | 2017-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 67.