http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106662820-B
Outgoing Links
Predicate | Object |
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classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-327 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-162 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0755 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-08 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 |
filingDate | 2015-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2021-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2021-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-106662820-B |
titleOfInvention | Composition for forming silicon-containing resist underlayer film having halosulfonylalkyl group |
abstract | The invention provides a resist underlayer film which can form an excellent resist pattern shape when an upper resist film is exposed and developed by an alkali developing solution or an organic solvent, and a composition for forming the same. A resist underlayer film forming composition for lithography, comprising a hydrolyzable silane as a silane, a hydrolysate thereof, a hydrolysis-condensation product thereof, or a combination thereof, the hydrolyzable silane comprising a hydrolyzable silane represented by formula (1). [ in the formula (1), R 1 Is an organic group represented by the formula (2) (in the formula (2), R 4 Represents an optionally substituted alkylene group having 1 to 10 carbon atoms, R 5 Represents a sulfonyl group or a sulfonamide group, R 6 Represents a halogen-containing organic group.]. R in the above formula (2) 6 Is a fluorine-containing organic group. R in the above formula (2) 6 Is trifluoromethyl. A resist underlayer film obtained by applying the resist underlayer film forming composition onto a semiconductor substrate and baking the composition. Also contains an acid as a hydrolysis catalyst. Also contains water. R 1 a R 2 b Si(R 3 ) 4‑(a+b) (1) ‑R 4 ‑R 5 ‑R 6 (2)。 |
priorityDate | 2014-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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