| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42372
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2016-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_efb5f8cfb81a450ca80b816c6f420abc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b3cccd03b8f28490d7c536e89c46252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8aec5e712f8d34dfe4b1f90e671e22ea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d897853310db0e53c1a4b3b7beea108d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2bfea9065e9fbba38e3f665e9351130 |
| publicationDate |
2017-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-106653588-A |
| titleOfInvention |
Method of modifying capping layer in semiconductor structure |
| abstract |
A method of fabricating the gate structure in a semiconductor device includes forming a gate dielectric layer over a semiconductor substrate. A capping layer is formed over the gate dielectric layer. The capping layer is treated with a first hydrogen plasma to form a first-treated capping layer. A gate electrode is formed over the first-treated capping layer. The method may further includes treating the first-treated capping layer with a nitrogen plasma. |
| priorityDate |
2015-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |