http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106575609-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4404 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2015-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106575609-B |
| titleOfInvention | Tuning Remote Plasma Sources for Improved Performance with Repeatable Etch and Deposition Rates |
| abstract | Embodiments of the present disclosure generally relate to methods for conditioning interior wall surfaces of remote plasma generators. In one embodiment, a method for processing a substrate is provided. The method includes the steps of exposing an inner wall surface of a remote plasma source to a conditioning gas in an excited state to passivate the inner wall surface of a remote plasma source, wherein the remote plasma source is coupled to a processing chamber through a conduit a chamber in which the substrate is disposed in a processing chamber and the conditioning gas comprises an oxygen-containing gas, a nitrogen-containing gas, or a combination of the foregoing. The method has been observed to enhance dissociation/recombination rates and plasma coupling efficiency in processing chambers, and thus provide repeatable and stable plasma source performance from wafer to wafer. |
| priorityDate | 2014-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.