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filingDate 2015-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2021-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-106548944-B
titleOfInvention Method for manufacturing semiconductor device
abstract Embodiments of a method of fabricating a semiconductor device include forming an epitaxial portion over a substrate, the epitaxial portion including a III-V material. A damaged material layer is located on at least one surface of the epitaxial portion. The method further includes oxidizing at least an outer surface of the damaged material layer to form an oxide layer, selectively removing the oxide layer, and repeating the oxidizing and selectively removing steps while at least a portion of the damaged layer remains on the epitaxial portion. The method for manufacturing the semiconductor device can improve the performance of the device by removing the damaged material layer from the outer surface of the epitaxial fin part, the source/drain level and the nano wiring through a process.
priorityDate 2015-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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