http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106517111-B

Outgoing Links

Predicate Object
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-80
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-062
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B21-06
filingDate 2016-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2019-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-106517111-B
titleOfInvention The high temperature and high pressure preparation process of chromium nitride
abstract The high temperature and high pressure preparation process of chromium nitride of the invention belongs to the technical field of semiconductor material chromium nitride preparation.It is sufficiently mixed using chromium trichloride, sodium azide and for reducing the sodium chloride of reaction rate as raw material, is cold-pressed into cylindric, be packed into the synthetic cavity of press;Heat-insulation pressure keeping 15~60 minutes under conditions of pressure is 5GPa, temperature is 1700~2000 DEG C, the mixing block product of CrN and NaCl is made;Grinding, washing are pulverized, obtains the CrN powder of high-purity after dry.Method of the invention does not need the oxygen and nitrogen gas concn that monitor reaction chamber constantly, does not need at high temperature using the ammonia reactant of circulation.Preparation time is substantially reduced compared with traditional preparation methods, cost is relatively low, and reaction is controllable, and reaction product cleaning simply just obtains the CrN of high-purity;And belong to new reaction mechanism.
priorityDate 2016-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 31.