| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4232
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2016-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2020-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-106505104-B |
| titleOfInvention |
FINFET device and method of fabricating the same |
| abstract |
Embodiments of the present invention provide a FinFET device that includes a substrate, a fin formed on the substrate, and a gate electrode traversing the fin. The gate electrode includes a head portion and a tail portion, and the tail portion is connected to the head portion and extends toward the substrate. The width of the head portion is greater than the width of the tail portion. Embodiments of the invention also provide another FinFET device and a method for manufacturing a FinFET device. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11784228-B2 |
| priorityDate |
2015-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |