http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106486415-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-424 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-20 |
| filingDate | 2015-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106486415-B |
| titleOfInvention | Method for manufacturing interconnection structure |
| abstract | The invention discloses a manufacturing method of an interconnection structure, and relates to the technical field of semiconductors. The method comprises the following steps: providing a substrate structure, wherein the substrate structure comprises a groove and a through hole, and seed crystal layers are formed on the surfaces of the groove and the through hole; dissolving a surface portion of the seed layer by a first ultrasonic double pulse plating process to enlarge an opening of the trench; electroplating a metal layer on the surface of the seed crystal layer by a second ultrasonic double-pulse electroplating process; dissolving a part of the electroplated metal layer by a third ultrasonic double-pulse electroplating process; repeating the second ultrasonic double-pulse electroplating process and the third ultrasonic double-pulse electroplating process, and filling electroplated metal layers in the grooves and the through holes to form an interconnection structure; wherein ultrasound is introduced during the electroplating process. The invention can avoid the generation of voids in the formed interconnection structure. |
| priorityDate | 2015-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.