http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106409995-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate | 2016-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106409995-B |
| titleOfInvention | The preparation method of QLED |
| abstract | The present invention provides the preparation methods of QLED a kind of, on the electron transport layer before depositing light emitting layer, the electron transfer layer is surface-treated, the following steps are included: the electron transfer layer is carried out oxygen gas plasma pretreatment or ozone treatment and ultraviolet lamp radiation treatment, wherein, the photon energy of the ultraviolet lamp radiation treatment is greater than effective band gap of electron transport material.The preparation method of QLED of the present invention, concentration, the removal organic residue impurity of electron transport layer materials surface defect can be effectively reduced, exciton is quenched to reduce electron transfer layer surface defect, and then effectively improves the luminous efficiency and service life of QLED device. |
| priorityDate | 2016-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.