http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106374054-A

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filingDate 2016-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78f4dd54b374afd487daaf2a894b622c
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publicationDate 2017-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-106374054-A
titleOfInvention ZrO2 thin film and its post-treatment method, QLED and its preparation method
abstract The invention discloses a ZrO2 thin film and its post - treatment method, QLED and its preparation method. The method comprises the steps of first depositing a layer of ZrO2 thin film on a substrate, and then immersing the ZrO2 thin film in TiCl4 containing 0.1-0.5mol/L solution or SnCl 2 solution or a mixture of the two, the immersion time is 5-30min, and then the ZrO 2 film is cleaned with a solvent, and after the surface of the ZrO 2 film is dry, annealing is performed to complete the post-treatment of the ZrO 2 film. In the invention, the surface of the ZrO2 film is modified to make electrons more easily transported, thereby improving the electron transport capacity. The ZrO2 thin film of the present invention can be dispersed in alcohol solution, so that it can form an orthogonal solvent with the oil-soluble QD layer. ZrO 2 thin films can be used in positive and inverse QLEDs.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023125074-A1
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Total number of triples: 28.