| abstract |
The invention discloses a QLED, a preparation method and a light-emitting device, wherein the QLED sequentially comprises: a substrate, a bottom electrode, a hole injection layer, a hole transport layer, a first insulating layer, a quantum dot light-emitting layer, a second insulating layer, electron transport layer and top electrode. The present invention adds an insulating layer between the electron transport layer/hole transport layer and the quantum dot light-emitting layer. On the one hand, the injection of electrons and holes into the quantum dot light-emitting layer can be controlled respectively through the insulating layer to control and optimize the loading. On the other hand, an insulating layer is added on both sides of the quantum dot light-emitting layer, which can effectively confine electrons and holes in the quantum dot light-emitting layer, increase their recombination probability, and improve the overall efficiency of the device . |