http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106342342-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-00 |
| filingDate | 2012-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106342342-B |
| titleOfInvention | A kind of ultraviolet/infrared double-color detector and manufacture method thereof |
| abstract | The invention belongs to semiconductor photo detector manufacturing technology, particularly a kind of structure of CdS/InSb double-color detector and manufacture method thereof. Described ultraviolet/infrared double-color detector comprises InSb electrode [1], InSb detector [5], passivation layer [4], CdS photo-conductive film [2] and CdS electrode [3], wherein, described passivation layer [4] is covered on InSb detector [5], expose InSb electrode [1], CdS photo-conductive film [2] is deposited on passivation layer [4], CdS electrode layer [3] is deposited on CdS photo-conductive film [2], the photosurface of described CdS photo-conductive film [2] and InSb detector [5] photosurface overlaid in vertical direction. Detector production equipment of the present invention and technique are simple, and yield rate is high, and cost is low, and reliability is high, have larger actual application value and economic benefit. |
| priorityDate | 2012-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.