| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0259
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02614
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-04 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-34 |
| filingDate |
2016-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-106328708-B |
| titleOfInvention |
Apparatus including a two-dimensional material structure and method of forming the two-dimensional material structure |
| abstract |
The present invention relates to a device comprising a two-dimensional material structure and a method of forming the two-dimensional material structure. One of the transistors includes: a substrate; a two-dimensional material structure including at least one layer arranged substantially vertically on the substrate such that the edges of the at least one layer are on the substrate and the at least one layer extends substantially perpendicular to the substrate a source electrode and a drain electrode connected to opposite ends of the two-dimensional material structure; a gate insulating layer on the two-dimensional material structure between the source and drain electrodes; and a gate electrode on the gate insulating layer. Each of the at least one layer includes a semiconductor having a two-dimensional crystal structure. |
| priorityDate |
2015-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |